Addressing the challenges of electromagnetic compatibility testing and non-destructive inspection of internal structures in miniaturized electronic devices. This paper reports a non-destructive testing method based on wide-field imaging using diamond nitrogenvacancy (NV) centers, and systematically demonstrates its application on a black-epoxyencapsulated Universal Serial Bus (USB) flash drive. In the experiment, a swept microwave signal from 2.82 GHz to 2.97 GHz was sequentially injected into the four external interface pins of the USB drive. A bulk diamond served as the quantum sensing layer, and optically detected magnetic resonance (ODMR) was employed to perform wide-field imaging of the microwave field distribution on the surface of the signal lines within a 1 × 1 mm2 region of interest. The experimental results show that the microwave field distributions corresponding to different interface channels are significantly different. Based on these differences, the connection relationship between each signal line and its corresponding interface pin can be clearly identified, and the differences in field distribution as well as crosstalk characteristics among channels can be revealed. The method established in this work provides an effective technical pathway for non-destructive electromagnetic testing and functional verification of electronic products.
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